advanced power dual p-channel enhancement electronics corp. mode power mosfet simple drive requirement bv dss -30v lower gate charge r ds(on) 36m fast switching performance i d -6a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice halogen-free product thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 storage temperature range drain current 3 , v gs @ 10v - 4.8 pulsed drain current 1 - 30 parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 10v 1 ap4963gem-hf rating - 30 + 20 - 6 201501052 s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 d1 s2 g2 d2 a p4963 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflo w technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 36 m ? v gs =-4.5v, i d =-4a - - 65 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 9.4 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -10 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge 2 i d =-6a - 9 14.5 nc q gs gate-source charge v ds =-15v - 2.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5.5 - nc t d(on) turn-on delay time 2 v ds =-15v - 8 - ns t r rise time i d =-1a - 9.5 - ns t d(off) turn-off delay time r g =3.3 -20- ns t f fall time v gs =-10v - 20 - ns c iss input capacitance v gs =0v - 500 800 pf c oss output capacitance v ds =-25v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 135 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 25 - ns q rr reverse recovery charge di/dt=-100a/s - 17 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10s ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap4963gem-hf
a p4963gem-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 0 10 20 30 40 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v 20 30 40 50 60 70 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-4a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g =-10v 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
ap4963gem-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.0 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0481216 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -6a v ds = -15v 0 200 400 600 800 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss operation in this area limited by r ds(on)
ap4963gem-hf marking information 5 4963gem ywwsss part numbe r date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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